MUN5212DW1T1 |
RFQ for MUN5212DW1T1 Required Field |
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| Technical/Catalog Information | MUN5212DW1T1 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 100mA |
| Power - Max | 385mW |
| Resistor - Base (R1) (Ohms) | 22K |
| Resistor - Emitter Base (R2) (Ohms) | 22K |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300A, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Frequency - Transition | - |
| Mounting Type | Surface Mount |
| Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
| Packaging | Tape & Reel (TR) |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MUN5212DW1T1 MUN5212DW1T1 |
| Product | Manufacturers | Pack | D/C |
| MUN5212DW1T1 | - | SOT363 | - |
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base?emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series, two BRT devices are housed in the SOT?363 package which is ideal for low power surface mount applications where board space is at a premium.
Features |
| • Simplifies Circuit Design• Reduces Board Space• Reduces Component Count• Available in 8 mm, 7 inch/3000 Unit Tape and Reel |
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Rating |
Symbol |
Value |
Unit |
| Collector-Base Voltage |
VCBO |
50 |
Vdc |
| Collector-Emitter Voltage |
VCEO |
50 |
Vdc |
| Collector Current |
IC |
100 |
mAdc |
